Technology Benefits2019-01-25T12:59:00+00:00

Project Description

  • XBAW™ Technology Benefits

    • Enhanced material properties of Single crystal AlN with better FOM (k2 * Q) enables differentiated filter performance at frequencies > 3GHz
    • High acoustic velocity & thermal conductivity resulting in improved power handling
    • Higher k2 (coupling) enables larger bandwidth filters
    • MEMS based process flow on a 6” Si-substrate with unique wafer process and flexible with respect to piezo material synthesis/ composition
    • Compatible with multiple packaging technologies to enable compact footprint
  • XBAW™ Technology Benefits

    Enhanced material properties of Single crystal AlN with better FOM (k2 * Q) enables differentiated filter performance at frequencies > 3GHz for mobile, Wi-Fi & 5G infrastructure applications

  • XBAW™ Technology Benefits

    Single crystal AlN: High acoustic velocity & thermal conductivity resulting in improved power handling for RF filters for mobile, Wi-Fi & 5G infrastructure applications

  • XBAW™ Technology Benefits

    Single crystal AlN: Higher k2 (coupling) enables larger bandwidth filters for mobile, Wi-Fi & 5G infrastructure applications

  • XBAW™ Technology Benefits

    MEMS based process flow on a 6” Si-substrate with unique wafer process and flexible with respect to piezo material synthesis/ composition. This process is compatible with chip, wire-bond , wafer-level packaging (WLP) and allows design-of-experiments (DOE) to explore piezo quality influence on RF filter performance.

  • XBAW™ Technology Benefits

    XBAWTM technology is compatible with multiple packaging technologies to enable compact footprint and compliance to standard manufacturing processes as required for low cost manufacturing especially 5G massive MIMO and small cell applications

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