The center of better performance

  • Enhanced material properties and optimized resonator with better FOM (k2 * Q) enables differentiated filter performance at frequencies in range 1 to 7GHz
  • High acoustic velocity & thermal conductivity resulting in improved power handling
  • Higher k2 (coupling) enables larger bandwidth filters
  • MEMS-based process flow on a 6” Si-substrate with unique wafer process and flexible with respect to piezo material synthesis/ composition
  • Compatible with multiple packaging technologies to enable compact footprint

The center of better performance

High Frequency Performance

Enhanced material properties and optimized resonatorbetter FOM (k2 * Q) enables differentiated filter performance at frequencies in range 1 to 7GHz for mobile, Wi-Fi, 5G infrastructure and defense applications.

The center of better performance

Improved Power Handling

High purity AlN piezoelectric offers high acoustic velocity & thermal conductivity resulting in improved power handling for RF filters for Wi-Fi, 5G infrastructure & mobile applications

The center of better performance

Ultra-Wide Bandwidth

Higher k2 (coupling) enables wider bandwidth filters for Wi-Fi, 5G infrastructure & mobile, and defense applications.

The center of better performance

Flexible Platform

MEMS-based process flow on a 6” Si-substrate with a unique wafer process and flexible with respect to piezo material synthesis/composition. This process is compatible with chip, wire-bond, wafer-level packaging (WLP) and allows design-of-experiments (DOE) to explore piezo quality influence on RF filter performance.

The center of better performance

Compact & Cost Efficient

XBAW® technology is compatible with multiple packaging technologies to enable compact footprint and compliance to standard manufacturing processes as required for low cost manufacturing especially 5G mobile, massive MIMO and small cell applications.