The Benefits of XBAW® Technology
The center of better performance
- Enhanced material properties and optimized resonator with better FOM (k2 * Q) enables differentiated filter performance at frequencies in range 2 to 7GHz
- High acoustic velocity & thermal conductivity resulting in improved power handling
- Higher k2 (coupling) enables larger bandwidth filters
- MEMS-based process flow on a 6” Si-substrate with unique wafer process and flexible with respect to piezo material synthesis/ composition
- Compatible with multiple packaging technologies to enable compact footprint
The center of better performance
High Frequency Performance
Enhanced material properties and optimized resonatorbetter FOM (k2 * Q) enables differentiated filter performance at frequencies in range 2 to 7GHz for mobile, Wi-Fi, 5G infrastructure and defense applications.
The center of better performance
Improved Power Handling
High purity AlN piezoelectric offers high acoustic velocity & thermal conductivity resulting in improved power handling for RF filters for Wi-Fi, 5G infrastructure & mobile applications
The center of better performance
Ultra-Wide Bandwidth
Higher k2 (coupling) enables wider bandwidth filters for Wi-Fi, 5G infrastructure & mobile, and defense applications.
The center of better performance
Flexible Platform
MEMS-based process flow on a 6” Si-substrate with a unique wafer process and flexible with respect to piezo material synthesis/composition. This process is compatible with chip, wire-bond, wafer-level packaging (WLP) and allows design-of-experiments (DOE) to explore piezo quality influence on RF filter performance.
The center of better performance
Compact & Cost Efficient
XBAW® technology is compatible with multiple packaging technologies to enable compact footprint and compliance to standard manufacturing processes as required for low cost manufacturing especially 5G mobile, massive MIMO and small cell applications.