Next-generation connectivity architectures are demanding solutions that support high-frequency, ultra-wideband, and high-power coexistence RF filters.
XBAW’s advanced technology commands better performance at higher frequencies, offering ultra-wideband and improved power handling–all in an ultra-small footprint.
XBAW® technology addresses the industry’s toughest challenges for power handling at frequencies ranging from 1.5 to 20GHz, and the need for wider bandwidth filtering solutions.
XBAW® is a patented MEMS-based technology optimized to address the most stringent frequency selectivity requirements with superior resonator characteristics ideally suited for frequencies in the range of 1.5 to 20GHz.
Demonstrated differentiated filter performance by leveraging proprietary MEMS-based process flow on a 6” Si-substrate (scalable to 8”) with a unique wafer process and flexible with respect to piezo material synthesis/composition. This process is compatible with chip, wire-bond, wafer-level packaging (WLP) and allows design-of-experiments (DOE) to explore piezo quality influence on RF filter performance.
